Ag buffer layer effect on magnetization reversal of epitaxial Co films
نویسندگان
چکیده
Nano-sized Ag(111) islands were first prepared by using molecular beam epitaxy technique on dilutedhydrofluoric acid etched Si(111) substrate. Epitaxial Co films were then grown onto the Ag films at 100 °C to decrease interdiffusion. The Ag buffer layer designed to form isolated islands with {111} sidewalls on the Si(111) substrate, and provided Co films (111) texture growth to study the correlation between magnetic properties of Co films and Ag buffer layer effect. It reveals that the Ag rough surface acts as a pinning source and Ag {111} sidewalls also plays an important role on the magnetoresistance transition of Co films.
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